N型氮化镓的结构和光电导特性

The Structure and Photoconductivity of N-Type GaN

摘要: 采用透射电镜高分辨反射电子衍射，扫描电镜形貌观察，X射线衍射等不同方法测试了不同Mg含量的N型氮化镓薄膜的结构。几种测定方法的比较表明，高分辨反射电子衍射是确定厚衬底的薄膜结构的快速而简便的方法，材料的杂质和缺陷是影响其光电导性质的重要因素。

Abstract: The structural properties of Mg doped GaN films with different Mg concentrations deposited by MOCVD have been measured by TEM with high resolution reflective electron diffraction, SEM and X ray diffraction. The obtained results show that the high resol